The purposes of this thesis were to investigate the influence of the vapor phase stoichiometry in the ambient on electrical properties of silicon carbide grown by physical vapor transport (PVT) process in order to provide a better understanding of the nature of the compensation mechanisms in semi-insulating SiC crystals.List of Figures Fig. 2-1. A schematic of atomic structures showing the stacking sequences of different SiC polytypes. The inequivalent sites are labeled as A, B and C, and the unit cell boundaries are marked with horizontal double dashed lines.
|Title||:||The Influence of Stoichiometry on Electrical Properties of Silicon Carbide Grown by Physical Vapor Transport Process|
|Publisher||:||ProQuest - 2005|