Technical digest 1986

Technical digest 1986

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Block diagram of the bit path circuitry. ... A nominal FET pinchoff voltage of -l.S V is achieved by selective implantation of Si+ ions into semi-insulating GaAs substrates with a con- Figure 3. Schematic of the current source array. ... All MESFETs use lum long Ti-Pd-Au gates, with the exception of the current source devices which use Lg Ar 3um. ... MIM capacitors are fabricated between first-layer interconnect metal and second-layer airbridge metal, using a 2000 A thick layer of siliconanbsp;...

Title:Technical digest 1986
Author:IEEE Electron Devices Society, IEEE Microwave Theory and Techniques Society
Publisher: - 1986


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