This dissertation concerns with fundamental aspects of organo-metallic vapor phase epitaxy (OMVPE) of III-V semiconductor nanowires (NWs), and their structural and electrical properties inferred from a variety of device schemes. An historical perspective on the NW growth techniques and mechanisms, and an overview of demonstrated NW devices and their performance is summarized in chapter 1.Time resolved transfer characteristics of an InAs NWFET with LSD=3.35 I¼m, LG = 1.02 I¼m, D=72 nm, showing long characteristic ... Schematic diagram of experimental probe tip and sample geometry and electrical measurement configuration.
|Title||:||Semiconductor Nanowires for Future Electronics: Growth, Characterization, Device Fabrication, and Integration|
|Author||:||Shadi A. Dayeh|
|Publisher||:||ProQuest - 2008|