This newly revised edition adds two entirely new chapters, one of LDMOS high power RF transistors and how they differ from bipolars, and TMOS FETs, etc. as well as another chapter on designing high power RF amplifiers using LDMOS.In high voltage operation, it must be noted that the gate rupture voltage can be easily exceeded since during the negative half cycle of the input signal, ...  H.O. Granberg, aPower MOSFETs versus Bipolar Transistors, a Application Note AN- 860, reprinted in Motorola RF Application Reports, HB215, ...  Various Application Notes, The Acrian Handbook, Acrian Power Solutions, San Jose, CA, 1987, pp.
|Title||:||Radio Frequency Transistors|
|Author||:||Norm Dye, Helge Granberg|
|Publisher||:||Newnes - 2001|