4 Ar Hlipsomacr Ar1 I6A ai Hlipicrmaer Ar1 2 1.5 A A QkpMMUrfM 18.5A X EHipsomaerAll 30A o EUipsomaer Ar2 19A ac Eltipsomcter ... Adsorption of hydrocarbons was simulated by exposing silicon wafers to octane.4 Three wafers were tested using GC-MS techniques. ... Change in apparent oxide thickness over the course of I5 days. ... Cumulative stand-alone metrology measurement and queue time data.
|Title||:||Process, Equipment, and Materials Control in Integrated Circuit Manufacturing|
|Author||:||Anthony John Toprac, Kim Dang, Electrochemical Society|
|Publisher||:||Society of Photo Optical - 1999|