aNanowire Field Effect Transistor: Basic Principles and Applicationsa places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.Find the eigenfunction satisfying the periodic boundary conditions in the interval 0 x Lx ;0 y Ly ;0 z Lz. 1.2 Verify that (1.28) is the solution of the ... 1.4 Consider a quantum well with the potential depth V 1a4 3:1 eV and the width ranging from 1 to 10 nm. a. ... Kim, D. M. (2010) Introductory quantum mechanics for semiconductor nanotechnology, John Wiley-VCH, New Jersey. 2. ... Liboff, R. L. ( 2002).
|Title||:||Nanowire Field Effect Transistors: Principles and Applications|
|Author||:||Dae Mann Kim, Yoon-Ha Jeong|
|Publisher||:||Springer Science & Business Media - 2013-10-23|