The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK A.G. Cullis, John L. Hutchison ... As a result of the relatively large distance of 2.5 I¼m between the wafer surface and the junction, FIB cuts were made to provide a vacuum reference near the junction for holography, ... No attempt has been made to remove phase a#39;wrapsa#39; lying along this edge. The white line shows the region from which phase profiles were obtained. b) Schematic diagram showing the FIB cuts to theanbsp;...
|Title||:||Microscopy of Semiconducting Materials|
|Author||:||A.G. Cullis, John L. Hutchison|
|Publisher||:||Springer Science & Business Media - 2006-08-25|