Microelectronics Technology and Devices - SBMicro 2010

Microelectronics Technology and Devices - SBMicro 2010

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Held in Sao Paulo, Brazil, from September 6 - September 9, 2010, the mission of the 25th Symposium on Microelectronics Technology and Devices Ai SBMicro2010 was to share ideas and to point to new directions for future research and development. SBMicro offers researchers and practitioners a unique opportunity to share their perspectives with those interested in the various aspects of microelectronics. This issue of ECS Transactions continues the SBMicro tradition of being a premier forum for the presentation of leading edge research on process, devices, sensors and integrated circuit technology.sensor), a medium distance field (typically 3-6 meters from the sensor), and a far field (typically 8-15 meters from the sensor). (a) (b) (c) Figure 1. (a) Typical low- cost passive infrared (PIR) motion sensor; (b) schematic view of the principle of a PIR sensor; (c) photography ... is added to transform the high impedance of the detector circuit to a common output resistance typically bellow 10 K. The pyroelectricanbsp;...

Title:Microelectronics Technology and Devices - SBMicro 2010
Author:Marcelo Antonio Pavanello, Cor Claeys, Joao Antonio Martino
Publisher:The Electrochemical Society - 2010-09


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