Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.The MOSFET is an extremely flexible circuit element because there can be n- and p-channel devices with current that increases or decreases with gate voltage . ... Figure 9.6aac shows the circuit diagram, the top view and the cross section of the CMOS inverter, respectively. ... High temperature processing (600a1, 000AdC) is required to anneal the lattice disorder, returning the implanted semiconductor to aanbsp;...
|Title||:||Ion Implantation and Synthesis of Materials|
|Author||:||Michael Nastasi, James W. Mayer|
|Publisher||:||Springer Science & Business Media - 2007-05-16|