Growth of GaAs Single Crystals by Liquid Encapsulated Czochralski Technique* R Thyagarajan, R C Narula aamp; T R Parashar Solid ... layer thickness, interface temperature gradient, crucible shape, configuration of crystal seed, ambient gas pressure, pulling speed, etc. ... and Bass and Oliver3 first reported the growth of GaAs and In As crystals using it. ... Experimental Procedure A schematic diagram of the apparatus used for GaAs crystal growth by the LEC method is shown in Fig. 1.
|Title||:||Indian Journal of Pure & Applied Physics|