A wideband balanced low noise amplifier with AlGaN/GaN HEMTs was reported for the first time, using Coplanar waveguide (CPW) Lange coupler. The LNA demonstrated broad bandwidth of 3--16 GHz and high gain of 20 dB with a minimum noise figure of 4 dB. High linearity was demonstrated with 38 dBm of OIP3 at 8 GHz.... concentrations of (a) design 1 (AlGaN/GaN/ AlGaN) (b) design 2 (AlGaN/InGaN /AlGaN) and (c) design 3 (AlGaN/InGaN/GaN) HEMT Energy Band Diagram HEMT Energy Band Diagrarr (a) (b) HEHT Energy Band Diagram 0.6)30 a#39; 0.040 a#39; 0.
|Title||:||High Frequency MIS-based III-nitride Transistor and Integrated Bio-sensor Technology|
|Publisher||:||ProQuest - 2009|