This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an expertsa insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMGFigure 5.3 illustrates the cross-section of an n-channel, double-gate FinFET and its energy-band diagram for the gate-drain overlap region when a low gate voltage and a high drain voltage are applied. If the band bending at the oxide interfaceanbsp;...
|Title||:||FinFET Modeling for IC Simulation and Design|
|Author||:||Yogesh Singh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi, Ai Niknejad, Chenming Hu|
|Publisher||:||Academic Press - 2015-03-17|