Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors. The book provides an up-to-date account of the progress made in power transistor design. This volume consists of three parts. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. It also discusses the effect of high carrier concentration on the semiconductor properties. Part II deals with bipolar transistors and the basic structures of power transistors. Part III discusses junction field-effect and surface field-effect transistors. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level.MOS power transistors should, be therefore. very suitable for operation as dudio amplifiers. The basic principle of operation is illustrated by the simplified circuit of Fig. 1. Another MOST application of audio amplification consists of the pulse width modulation technique feasible with MOST, but impractical with bipolar transistors because of the required high carrier frequency. The maximum usable voltage of the MOST is somewhat below the drain-to-source breakdown BVDS: theanbsp;...
|Title||:||Field-Effect and Bipolar Power Transistor Physics|
|Publisher||:||Elsevier - 2012-12-02|