This book enables circuit designers to reduce the errors introduced by the fundamental limitations (noise, bandwith, and signal power) and electromagnetic interference (EMI) in negative-feedback amplifiers. The authors describe a systematic design approach for application specific negative-feedback amplifiers, with specified signal-to-error ratio (SER). This approach enables designers to calculate noise, bandwidth, EMI, and the required bias parameters of the transistors used in application specific amplifiers in order to meet the SER requirements.Active devices are the building blocks of (negative-feedback) amplifiers. There are three types of relevant active semiconductor devices: the bipolar junction transistor (bjt), the metal-oxide-semiconductor field-effect transistor (mosfet) and theanbsp;...
|Title||:||EMI-Resilient Amplifier Circuits|
|Author||:||Marcel J. van der Horst, Wouter A. Serdijn, André C. Linnenbank|
|Publisher||:||Springer Science & Business Media - 2013-07-23|