This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readersa understanding of future trends in non-volatile memories.2.37 Dynamic power consumption in a CMOS inverter Nowadays, the design of digital circuits is based on CMOS (complementary ... An inverter is used to perform the most simple logic operation, i.e., changing a logic a#39;1a#39;into a#39;0a#39; and vice versa.
|Title||:||Emerging Non-Volatile Memories|
|Author||:||Seungbum Hong, Orlando Auciello, Dirk Wouters|
|Publisher||:||Springer - 2014-11-18|