Power Semiconductor Devices Theory and Applications VAst???zslav Benda Czech Technical University, Prague, Czech Republic John Gowar Duncan A. Grant University of Bristol, UK Recent advances in robotics, automatic control and power conditioning systems have prompted research into increasingly sophisticated power semiconductor devices. This cutting-edge text explores the design, physical processes and applications performance of current power semiconductor devices. The extensive scope covers the complete range of discrete and integrated devices now available. Features include: * Use of physical models to explain the device structures and functions without complicated mathematical techniques * Explanation of the structure, function, characteristics and features of the most important discrete and integrated power devices * Demonstration of the influence of construction and technological parameters on important device characteristics * Sections on power modules and conditions for reliable operation plus a look at future materials and devices This valuable reference encompassing the structure, operation and application of power semiconductor devices will benefit both practising electronics engineers and students of power electronics.Figure 4.12 A generalised three-phase inverter circuit SCR-switched inverter circuits because of the relatively long turn-off time of SCRs. It is more suitable for inverters using MOSFET, BJT or IGBT switching devices, which are capable of fasteranbsp;...
|Title||:||Discrete and Integrated Power Semiconductor Devices|
|Author||:||Vítezslav Benda, John Gowar, Duncan A. Grant|
|Publisher||:||John Wiley & Sons - 1999|