Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.For the gate, it is Er. For \i- source/drain, it is Pt. From this figure, the device structure of SOI MESFETa#39;s s much simpler than that of the SOI MOSFETa#39;s. Therefore, the processing technology is also easier. The structure of an inverter circuit usinganbsp;...
|Title||:||CMOS VLSI Engineering|
|Author||:||James B. Kuo, Ker-Wei Su|
|Publisher||:||Springer Science & Business Media - 1998-09-30|