Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.The same physics can be illustrated in the energy band diagram by raising the Fermi energy in semiconductor above that in metal by an amount of qVG, which consequently raises the conduction and valence band edges and results in aanbsp;...
|Title||:||Analysis and Design of MOSFETs|
|Author||:||Juin Jei Liou, Adelmo Ortiz-Conde, Francisco Garcia-Sanchez|
|Publisher||:||Springer Science & Business Media - 2012-12-06|