As a result of this analysis, GT/GST/GT devices showed a modest (24%) reduction in programming current on the first cycle and a significant (99%) reduction on subsequent cycling. Reasons for this and reliability concerns are discussed. Finally, suggestions for further improving the layered structure are presented.Chapter 1 Introduction 1.1 Introduction and Motivation The market for non-volaitle memory is expected to grow from $27.5 billion in ... One notable example of this is the solid state drive available in Applea#39;s recently announced Macbook Air .
|Title||:||A Layered Chalcogenide Phase Change Memory Device|
|Author||:||Aaron Matthew Gibby|
|Publisher||:||ProQuest - 2008|